Raymond T. Tung

Raymond Tung

Dept. of Physics
Brooklyn College of CUNY
2900 Bedford Avenue
Brooklyn, NY 11210
Tel. (718) 951-5807 Fax (718) 951-4407
rtung@brooklyn.cuny.edu

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Education

University of Pennsylvania

Ph.D. Physics

1980

National Taiwan University

B.S. Physics

1973


Professional Experience

Professor, Physics

Brooklyn College

2002 - Present

Visiting Chair

Research Center for Quantum Effect Electronics, Tokyo

2001 - 2002

Distinguished Member of Technical Staff

Agere Systems

2001 - 2001

Distinguished Member of Technical Staff

Lucent Technologies Bell Labs

1982 - 2001

Visiting Chair

Tokyo Institute of Technologies, Tokyo

1996 - 1996

Adjunct Professor

University of Pennsylvania

1989 - 1991

Technical Staff (PostDoc)

Bell Laboratories

1980 - 1982


Research Interests

Fabrication, TEM, ion beam characterization, and electronic properties of metal-semiconductor and semiconductor-semiconductor interfaces.  Metallization, junction, and defects issues for deep sub-micron silicon devices.  Theories on the formation and the electronic transport of Schottky barriers and semiconductor heterojunctions.


Selected Publications

  • Charges and dipoles at semiconductor interfaces, R. T. Tung, Mat. Res. Soc. Symp. Proc. 719, F12.1 (2002).
  • Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements, S. Huang, S. Banerjee, R. T. Tung, and S. Oda, J. Appl. Phys. 93, 576 (2003).
  • Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry, Y. Tsuchiya, M. Endo, M. Kurosawa, R.T.Tung, T. Hattori and S. Oda, Japanese Journal of Applied Physics 42 (4B)1957-1961(2003)
  • Evaluation of quantum confinement energy in nanocrystaline silicon dots from high-frequency conductance measurement, S. Huang, S. Banerjee, R. T. Tung, and S. Oda, Appl. Phys. Lett (2003).
  • Epitaxial Silicide Formation On Recoil-Implanted Substrates, S. Hashimoto, K. Egashira, T. Tanaka, R. Etoh, Y. Hata, and R. T. Tung, J. Appl. Phys. to appear to Jan. 1, 2005.
  • Self-Aligned Silicides, R. T. Tung, a chapter in Encyclopedia of Materials: Science and Technology, Pergamon, Elsevier 2001.
  • Silicide Contacts to Source/Drain Region, R. T. Tung, a chapter in Encyclopedia of Materials: Science and Technology, Pergamon, Elsevier 2001.
  • The Changing Views on the Schottky Barrier, R. T. Tung, a chapter in Silicides fundamentals and applications, ed. L. Miglio and F. d'Heurle, World Scientific (2000).


Patents

  • Heteroepitaxy of multiconstituent material by means of a template layer, J. M. Gibson, J. M. Poate and R. T. Tung, U. S. Patent 4,477,308, October 16, 1984.
  • Formation of heterostructures by pulsed melting of precursor material, J. M. Gibson, J. M. Poate and R. T. Tung, U. S. Patent 4,555,301, November 26, 1985.
  • Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method, J. C. Hensel, A. F. J. Levi and R. T. Tung, U. S. Patent 4,707,197, November 17, 1987.
  • Semiconductor device comprising a perforated metal silicide layer, J. M. Gibson, J. C. Hensel, A. F. J. Levi, and R. T. Tung, U. S. Patent 4,901,121, February 13, 1990.
  • Process for device fabrication in which a thin layer of cobalt silicide is formed, R. T. Tung, U. S. Patent 5,728,625, Mar. 17, 1998