Kai Shum

Kai Shum

Professor
Department of Physics
Brooklyn College of CUNY
2900 Bedford Avenue
Brooklyn, NY 11210
Phone: (718) 951-5000 (Ext. 2863)
Fax: (718) 951-4407
kshum@brooklyn.cuny.edu

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Education

The City College of NY

Ph.D., Electrical Engineering

1987

The City College of NY

M.S., Electrical Engineering

1984

Suzhou University, China

B.S., Physics

1982


Professional Experience

Associate Professor, Physics

Brooklyn College

2005 - Present

Guest Professor

Institute of Semiconductor,
Chinese Academy of Sciences, Beijing

1993 - Present

Senior Design/Validation Engineer

TriQuint Semiconductor, PA

2003 - 2005

Distinguished member Technical Staff

Agere Systems, PA

2002 - 2003

Distinguished member Technical Staff

Bell Labs/Lucent Technologies, PA

2000 - 2002

Professor, Electrical Engineering

The City College of NY

1998 - 2001

Visiting Scientist

Thomas J. Watson Research Center of IBM

1996 - 2000

Visiting Scientist

AT&T Bell Laboratories, NJ

1995 - 1996

Associate Professor, Electrical Engineering

The City College of NY

1993 - 1997

Assistant Professor, Electrical Engineering

The City College of NY

1987 - 1992

Research Interests

  • Quantum bit implementation for quantum computers using semiconductor nanostructures
  • Infrared photodetectors
  • Low cost and high efficient solar cells

Selected Publications (Total of 51 papers and 3 provisional patent applications)

  • Demonstration of III-V Semiconductor-based nonvolatile memory devices, Zhongwei Pan and Kai Shum, Appl. Phys. Lett. 76, 505 (2000).
  • Quantum indistinguishability effects of confined polyexcitons, Kai Shum, P. M. Mooney, and J. O. Chu, Phys. Rev. B 60, 5786 (1999).
  • Dynamics of recombination-enhanced defect reaction in a ZnCdSe single quantum well, Minxue Tang, Kai Shum, L. Zeng, and M. C. Tamargo, Appl. Phys. Lett, 73, 1541 (1998).
  • A concept for nonvolatile memories, Kai Shum, Jianqin Zhou, Wei Zhang, L. Zeng, and M. C. Tamargo, Appl. Phys. Lett. 71, 2487 (1997).
  • Room temperature differential negative resistance in an Al/Zn0.61Cd0.39Se/n+-InP device, Kai Shum, J. Zhou, W. Zhang, L. Zeng, and M. C. Tamargo, Appl. Phys. Lett. 71, 815 (1997).
  • Quantum confined biexcitons in SiGe grown on Si(001), Kai Shum, P. M. Mooney, L. P. Tilly, and J. O. Chu, Phys. Rev. B 55, 13058 (1997).

Selected Grants
(Total: $ 1.5 Million - average funding per year = $125,000 over the time period of 1988 - 2000) 

  • Theoretical study on quantum entangled states in coupled quantum dots, PSC-CUNY, 2006 - 2007.
  • High density solid state memory, National Aeronautics and Space Administration (NASA), 1998 – 2001.
  • Photo-receivers based on SiGe grown on Si substrates, IBM, 1999 – 2001.
  • Optical interconnect for high performance computers, NEC, 1997 - 1999.
  • Hot electron SiGe laser, Air Force Office of Scientific Research (AFOSR), 1994 – 1997.
  • Quantum transport of femtosecond photo-excited carriers in semiconductor hetero-structures of GaAs and Si, National Science Foundation (NSF), 1992 - 1995.